The authors report the fabrication of high performance thin film transistors (TFTs) with an amorphous indium gallium zinc oxide channel, which was deposited by cosputtering using a dual IGZO and indium zinc oxide (IZO) target. The effect of the indium content on the device performance of the TFTs was investigated. At a relatively low IZO power of , the field-effect mobility and subthreshold gate swing (S) of the TFTs were dramatically improved to and /decade, respectively, compared to those ( and /decade) for the TFTs with the channel (reference sample) prepared using only the IGZO target. The enhancement in the subthreshold characteristics at an IZO power of compared to those of the reference sample was attributed to the reduction of the interface trap density rather than the reduction of the bulk defects of the channel.
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10 September 2007
Research Article|
September 11 2007
High performance thin film transistors with cosputtered amorphous indium gallium zinc oxide channel
Jae Kyeong Jeong;
Corporate R and D Center,
Samsung SDI Co., Ltd.
, 428-5, Gongse-Dong, Kiheung-Gu, Yongin-Si, Gyeonggi-Do 449-902, Korea
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Jong Han Jeong;
Jong Han Jeong
Corporate R and D Center,
Samsung SDI Co., Ltd.
, 428-5, Gongse-Dong, Kiheung-Gu, Yongin-Si, Gyeonggi-Do 449-902, Korea
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Hui Won Yang;
Hui Won Yang
Corporate R and D Center,
Samsung SDI Co., Ltd.
, 428-5, Gongse-Dong, Kiheung-Gu, Yongin-Si, Gyeonggi-Do 449-902, Korea
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Jin-Seong Park;
Jin-Seong Park
Corporate R and D Center,
Samsung SDI Co., Ltd.
, 428-5, Gongse-Dong, Kiheung-Gu, Yongin-Si, Gyeonggi-Do 449-902, Korea
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Yeon-Gon Mo;
Corporate R and D Center,
Samsung SDI Co., Ltd.
, 428-5, Gongse-Dong, Kiheung-Gu, Yongin-Si, Gyeonggi-Do 449-902, Korea
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Hye Dong Kim
Hye Dong Kim
Corporate R and D Center,
Samsung SDI Co., Ltd.
, 428-5, Gongse-Dong, Kiheung-Gu, Yongin-Si, Gyeonggi-Do 449-902, Korea
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a)
Electronic mail: [email protected]
b)
Electronic mail: [email protected]
Appl. Phys. Lett. 91, 113505 (2007)
Article history
Received:
July 02 2007
Accepted:
August 22 2007
Citation
Jae Kyeong Jeong, Jong Han Jeong, Hui Won Yang, Jin-Seong Park, Yeon-Gon Mo, Hye Dong Kim; High performance thin film transistors with cosputtered amorphous indium gallium zinc oxide channel. Appl. Phys. Lett. 10 September 2007; 91 (11): 113505. https://doi.org/10.1063/1.2783961
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