A method is presented for patterning the pentacene active layer of organic thin film transistor. The method involves forming a metal pattern on a gate dielectric surface by transfer patterning, depositing pentacene over the whole surface, and then lifting off a bilayer of pentacene on the metal with a flat elastomeric mold. Compared with the method of direct pentacene transfer reported earlier [S. Y. Park, T. Kwon, and H. H. Lee, Adv. Mater. (Weinheim, Ger.) 18, 1861 (2006)], this alternative allows one to choose a surface for larger pentacene grain size and eliminates a high off-current associated with the direct transfer method. The rigid nature of a rigiflex mold allows the pentacene pattern size to be defined in submicrometer range and the flexible nature of rigiflex and elastomeric molds permits large area application.
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26 February 2007
Research Article|
February 28 2007
Alternative to pentacene patterning for organic thin film transistor
Kyung-Ho Kim;
Kyung-Ho Kim
School of Chemical and Biological Engineering,
Seoul National University
, Seoul 151-742, Korea
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Ki-Wan Bong;
Ki-Wan Bong
School of Chemical and Biological Engineering,
Seoul National University
, Seoul 151-742, Korea
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Hong H. Lee
Hong H. Lee
a)
School of Chemical and Biological Engineering,
Seoul National University
, Seoul 151-742, Korea
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a)
Author to whom correspondence should be addressed; FAX: 82-2-878-5043; electronic mail: [email protected]
Appl. Phys. Lett. 90, 093505 (2007)
Article history
Received:
December 16 2006
Accepted:
January 24 2007
Citation
Kyung-Ho Kim, Ki-Wan Bong, Hong H. Lee; Alternative to pentacene patterning for organic thin film transistor. Appl. Phys. Lett. 26 February 2007; 90 (9): 093505. https://doi.org/10.1063/1.2709956
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