Negative differential resistance in tunneling transport through $C60$ encapsulated double-walled carbon nanotubes Available to Purchase

The authors report electric transport properties of resonance tunneling field-effect transistors fabricated using $C60$-filled metallic double-walled carbon nanotubes. The devices exhibit strong resonance tunneling characteristics and the distinct negative differential resistance with high peak-to-valley current ratio about 1300 is observed at room temperature. In particular, at high bias voltages, the tunneling current is completely dominated by the Coulomb oscillation peaks with uniform conductance at room temperature, reflecting a strong single-electron tunneling effect.