First-principles calculations based on density functional theory are used to elucidate the effect of O vacancies, forming F centers, on spin-dependent tunneling in FeMgOFe(001) magnetic tunnel junctions. O vacancies produce occupied localized s states and unoccupied resonant p states, which is consistent with available experimental data. The authors find that O vacancies affect the conductance by nonresonant scattering of tunneling electrons causing a substantial reduction of tunneling magnetoresistance (TMR). Improving the quality of the MgO barrier to reduce O vacancy concentration would improve TMR in these and similar junctions.

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Supercells are tetragonal with five layers of MgO and six (seven) layers of Fe in the electrodes. The 18 cell sizes are (2aMgO,2aMgO,6aFe+2aMgO+2h), where h=2.17Å is the distance between Fe and O atoms at the interface (Ref. 2).

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The transmission probability T(E) probes the features of electron tunneling that reveal themselves in the differential conductance at a finite bias voltage. At zero bias the conductance is given by G=(e2h)T(EF).

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