The authors report a significant dependence of the morphology and charge carrier mobility of poly(2,5-bis(3-dodecylthiophene-2-yl)thieno[3,2-b]thiophene) (pBTTT) films on the substrate surface chemistry upon heating into its liquid crystal phase. In contrast with films on bare silicon oxide surfaces, pBTTT films on oxide functionalized with octyltrichlorosilane exhibit substantial increases in the lateral dimensions of molecular terraces from nanometers to micrometers, increased orientational order, and higher charge carrier mobility. The large-scale crystallinity of this polymer plays an important role in the high carrier mobility observed in devices, but renders it more sensitive to substrate surface chemistry than other conjugated polymers.
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5 February 2007
Research Article|
February 08 2007
Significant dependence of morphology and charge carrier mobility on substrate surface chemistry in high performance polythiophene semiconductor films
R. Joseph Kline;
R. Joseph Kline
a)
National Institute of Standards and Technology
, Gaithersburg, Maryland 20899
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Dean M. DeLongchamp;
Dean M. DeLongchamp
b)
National Institute of Standards and Technology
, Gaithersburg, Maryland 20899
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Daniel A. Fischer;
Daniel A. Fischer
National Institute of Standards and Technology
, Gaithersburg, Maryland 20899
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Eric K. Lin;
Eric K. Lin
National Institute of Standards and Technology
, Gaithersburg, Maryland 20899
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Martin Heeney;
Martin Heeney
Merck Chemicals
, Southampton, S016 7QD United Kingdom
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Iain McCulloch;
Iain McCulloch
Merck Chemicals
, Southampton, S016 7QD United Kingdom
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Michael F. Toney
Michael F. Toney
Stanford Synchrotron Radiation Laboratory
, Menlo Park, California 94025
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Appl. Phys. Lett. 90, 062117 (2007)
Article history
Received:
September 30 2006
Accepted:
January 11 2007
Citation
R. Joseph Kline, Dean M. DeLongchamp, Daniel A. Fischer, Eric K. Lin, Martin Heeney, Iain McCulloch, Michael F. Toney; Significant dependence of morphology and charge carrier mobility on substrate surface chemistry in high performance polythiophene semiconductor films. Appl. Phys. Lett. 5 February 2007; 90 (6): 062117. https://doi.org/10.1063/1.2472533
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