Stress induced leakage current (SILC) in thin Hf-silicate layers and the mechanisms of its creation are examined. A very strong polarity and thickness dependence as well as partial recovery of SILC are observed. It is suggested that the trapping in preexisting sites influences SILC by two ways: (1) it could be the first stage of defect generation mechanism leading to the permanent component of SILC and (2) it is fully responsible for the partial recovery of SILC. Therefore, the origin of SILC in Hf silicate is distinctly different from that of . The physical origin of the preexisting sites is also discussed.
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.© 2007 American Institute of Physics.
2007
American Institute of Physics
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