The authors present a microphotoreflectance (micro-PR) spectroscopic study of a biased InGaAlAsGaAsSbInP heterojunction bipolar transistor. Franz Keldysh oscillations from an InGaAlAs emitter are studied as a function of the static biasing voltage applied to the emitter-base junction. The electric field value from the InGaAlAs emitter is decreasing under direct biasing voltage. The change in electric field value is shown to be in good agreement within the expected operation of forward biased junction, and making possible a straight measurement of the net doping concentration. Results show the feasibility of a micro-PR spectroscopy analysis of devices under operation.

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