Annealing condition optimization and electrical characterization of amorphous $LaAlO3∕GaAs$ metal-oxide-semiconductor capacitors

The electrical properties of amorphous $LaAlO3∕GaAs$ metal-oxide-semiconductor capacitors fabricated using molecular-beam deposition are investigated. The surface was protected during sample transfer between III-V and oxide molecular beam epitaxy chambers by a thick arsenic-capping layer. Amorphous $LaAlO3$ was deposited on $c(4×4)$ and $(2×4)$ reconstructed (100) GaAs surfaces. An annealing method, a low temperature-short time rapid thermal annealing (RTA) followed by a high temperature RTA, was developed, yielding extremely small hysteresis $(∼30mV)$⁠, frequency dispersion $(∼60mV)$⁠, and interfacial trap density $(mid-1010eV−1cm−2)$⁠.