A phase sensitive photodiode is fabricated on a thin silicon layer with a subwavelength ( period) grating. Optical absorption of the photodiode is enhanced by guided resonance of the grating to approximately 81% at the incident angle of 34.6° under TE polarization. Utilizing light beams impinging at the angles with enhanced sensitivities, a phase of two beams interfering in the silicon layer is precisely detected. The compact structure of the proposed detector can be used in several microinterferometers and integrated optics.
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