This letter describes how the temperature dependence of the electrical conductivity in semiconductors may be used to produce a linear floating molten zone which is intrinsically stable and uniform along its length. An analytical model and an experimental demonstration of such electric molten zone are both presented. This effect may be of particular interest for crystal growth and semiconductor recrystallization.

1.
W. G.
Pfann
,
Trans. AIME
194
,
747
(
1952
).
2.
W. G.
Pfann
,
Zone Melting
, 2nd ed. (
Wiley
,
New York
,
1966
),
71
.
3.
E.
Buehler
,
Rev. Sci. Instrum.
28
,
453
(
1957
).
4.
P. H.
Heck
and
M. J. E.
Golay
,
Phys. Rev.
89
,
1297
(
1953
).
5.
M. S.
Tyagi
,
Introduction to Semiconductor Materials and Devices
, 1st ed. (
Wiley & Sons
,
New York
,
1991
), p.
112
.
6.
Crystal and Solid State Physics
, edited by
K. H.
Hellwege
and
O.
Madelung
,
Group III, Landolt-Berstein, New Series
, Vol.
III
, Pt. 17A–22A–41A1b (
Springer
,
Berlin
,
1984
), p.
6
.
7.
M. N.
Wybourne
and
M. R.
Brozel
, Thermal Conductivity of c-Si, Properties of Crystalline Silicon, edited by
R.
Hull
(
INSPEC-The Institution of Electrical Engineers
,
London
,
1999
), p.
165
.
8.
J. C.
Henriques
, Ph.D. thesis,
University of Lisbon
,
2002
.
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