The authors report on the structural and electrical characteristics of high- erbium titanium oxide gate dielectrics deposited on Si (100) substrates by reactive rf sputtering. They find that the capacitance value of gate dielectric annealed at is higher compared to other annealing temperatures and exhibits a lower hysteresis voltage as well as interface trap density in curves. This dielectric also shows almost negligible charge trapping under high constant voltage stress. This phenomenon is attributed to an amorphous structure and the suppression of the interfacial layer and Er silicate observed from x-ray diffraction and x-ray photoelectron spectroscopy, respectively.
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