Band discontinuity measurements of the wafer bonded $InGaAs∕Si$ heterojunction

$p$-type $InGaAs∕Si$ heterojunctions were fabricated through a wafer fusion bonding process. The relative band alignment between the two materials at the heterointerface was determined using current-voltage $(I-V)$ measurements and applying thermionic emission-diffusion theory. The valence and conduction band discontinuities for the $InGaAs∕Si$ interface were determined to be 0.48 and $−0.1eV$⁠, respectively, indicating a type-II band alignment.