Micromagnetic investigation was performed on the influence of neighboring cells in a conventional rectangular array to the switching current density in the current-induced magnetization switching. We found that the was increased regardless of the relative switching direction to the overall stray field. It is because the precession of the magnetization in the switching cell induces a resonant precession in neighboring cells through magnetostatic interaction. The resonant precession disturbs a fast reversal and results in the enhanced for a fixed pulse width. The enhancement increases as the distance between the cells decreases. Here we proposed a zigzag array which significantly suppresses the enhancement of due to the resonant precession.
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21 May 2007
Research Article|
May 22 2007
Enhanced switching current density due to resonant precession in current-induced magnetization switching
Woojin Kim;
Woojin Kim
Department of Materials Science and Engineering,
Korea Advanced Institute of Science and Technology
, Daejeon 305-701, Korea
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Taek-Dong Lee;
Taek-Dong Lee
Department of Materials Science and Engineering,
Korea Advanced Institute of Science and Technology
, Daejeon 305-701, Korea
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Jang-Eun Lee;
Jang-Eun Lee
Semiconductor R&D Center
, Samsung Electronics Co., Ltd., Gyeonggi-Do 445-701, Korea
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Se-Chung Oh;
Se-Chung Oh
Semiconductor R&D Center
, Samsung Electronics Co., Ltd., Gyeonggi-Do 445-701, Korea
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Kyung-Ho Shin;
Kyung-Ho Shin
Nano Device Research Center,
Korea Institute of Science and Technology
, Seoul 136-791, Korea
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Hong-Ju Suh;
Hong-Ju Suh
Department of Materials Science and Engineering,
Korea University
, Seoul 136-713, Korea
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Kyung-Jin Lee
Kyung-Jin Lee
a)
Department of Materials Science and Engineering,
Korea University
, Seoul 136-713, Korea
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a)
Electronic mail: kj̱lee@korea.ac.kr
Appl. Phys. Lett. 90, 212504 (2007)
Article history
Received:
February 11 2007
Accepted:
April 25 2007
Citation
Woojin Kim, Taek-Dong Lee, Jang-Eun Lee, Se-Chung Oh, Kyung-Ho Shin, Hong-Ju Suh, Kyung-Jin Lee; Enhanced switching current density due to resonant precession in current-induced magnetization switching. Appl. Phys. Lett. 21 May 2007; 90 (21): 212504. https://doi.org/10.1063/1.2742282
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