Electrical characteristics of (GST) nanoparticles have been examined for a phase-change memory applications. The GST nanoparticles were generated by in situ pulsed laser ablation and their crystal structure formation was confirmed [H. R. Yoon et al., J. Non-Cryst. Solids 351, 3430 (2005)]. A stacked structure of the GST nanoparticles with of average diameter shows reversible nonvolatile switching characteristics between a high resistance state and a low resistance state as in the phase-change memory consisting of bulk GST thin film. Experimental results indicate that it is highly probable to test scaling issues of the phase-change memory with well-defined GST nanoparticles.
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© 2007 American Institute of Physics.
2007
American Institute of Physics
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