Immersion of polycrystalline silicon in hydrofluoric acid-based solutions is often utilized in microsystem fabrication to liberate mechanical structures. The authors demonstrate, using microfabricated tensile specimens, that such etching can cause a catastrophic reduction in tensile strength and elastic modulus in silicon galvanically coupled to a metallic layer, such as commonly used gold. Galvanically corroded silicon exhibits grain-boundary attack leading to intergranular fracture and/or generalized material removal. The severity of damage and corresponding losses in strength and modulus depend on etch duration and etch chemistry. In contrast, without a metallic layer, uncorroded silicon fails transgranularly and independent of etch duration or chemistry.

1.
I.
Chasiotis
and
W. G.
Knauss
,
J. Mech. Phys. Solids
51
,
1533
(
2003
).
2.
I.
Chasiotis
and
W. G.
Knauss
, in
Comprehensive Structural Integrity: Interfacial and Nanoscale Failure
(
Elsevier Science
,
Boston
,
2003
), Vol.
8
, p.
41
.
3.
M.
Huh
,
Y.
Yu
,
H.
Kahn
,
J. H.
Payer
, and
A. H.
Heuer
,
J. Electrochem. Soc.
153
,
G644
(
2006
).
4.
D. C.
Miller
,
W. L.
Hughes
,
Z.-L.
Wang
,
K.
Gall
, and
C. R.
Stoldt
,
J. Microelectromech. Syst.
16
,
87
(
2007
).
5.
O. N.
Pierron
,
D. D.
Macdonald
, and
C. L.
Muhlstein
,
Appl. Phys. Lett.
78
,
211919
(
2005
).
6.
D.
Koester
,
A.
Cowen
,
R.
Mahadevan
,
M.
Stonefeild
, and
B.
Hardy
,
Poly-MUMPs Design Handbook
, Revision 11 (
MEMSCAP Inc.
,
Research Triangle Park
,
2005
).
7.
D. C.
Miller
,
B. L.
Boyce
,
M. T.
Dugger
,
T. E.
Buchheit
, and
K.
Gall
,
Sens. Actuators, A
(to be published).
8.
B. L.
Boyce
,
J. M.
Grazier
,
T. E.
Buchheit
, and
M. J.
Shaw
,
J. Microelectromech. Syst.
16
,
179
(
2007
).
9.
R. W.
Hertzberg
,
Deformation and Fracture Mechanics of Engineering Materials
, 4th ed. (
Wiley
,
Hoboken
,
1996
), p.
261
.
10.
O. M.
Jadaan
,
N. N.
Nemeth
,
J.
Bagdahn
, and
W. N.
Sharpe
,
J. Mater. Sci.
38
,
4087
(
2003
).
11.
W. N.
Sharpe
,
K. M.
Jackson
, and
Z.
Xi
,
J. Microelectromech. Syst.
10
,
317
(
2001
).
12.
R.
Hill
,
Proc. Phys. Soc., London, Sect. A
65
,
349
(
1952
).
13.
H.
Kahn
,
C.
Deeb
,
I.
Chasiotis
, and
A. H.
Heuer
,
J. Microelectromech. Syst.
14
,
914
(
2005
).
You do not currently have access to this content.