The authors demonstrate that a high mobility two-dimensional electron gas can be capacitively induced in an undoped SiSi1xGex heterostructure using atomic-layer-deposited Al2O3 as the dielectric. The density is tuned up to 4.2×1011cm2, limited by the gate leakage current. The mobility increases with the density rapidly and reaches 5.5×104cm2Vs at the highest density. The observation of well developed quantum Hall states and two-dimensional metal-insulator transition shows that the devices are suitable for two-dimensional electron physics studies.

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