Anodic nanoclusters of GaN

The authors report an anodization of the deposited Al layer on a $p-GaN$ surface of $InGaN∕GaN$ multiquantum-well light-emitting-diode structures, which forms the anodic nanoclusters of GaN as well as the disordered alumina nanopore layer. The GaN nanoclusters show the shape of the radial hemisphere similar to an orange. The formation mechanism comes from the nanofluidic channel for supplying the electrolyte in electrochemical etching reaction. The nanorods with a diameter of about $100nm$ in nanocluster structures enhance the photoluminescence intensity by three times compared to the bare sample without anodization.