Air-stable $p-n$ junction diodes based on single-walled carbon nanotubes encapsulating Fe nanoparticles Available to Purchase

The authors report electrical transport properties of $p-n$ junction based on semiconducting single-walled carbon nanotubes (SWCNTs). The formation of $p-n$ junction is realized in SWCNTs, which are encapsulated with Fe nanoparticles at low filling fractions. The devices exhibit an excellent rectifying behavior, and no current down to $10−14A$ level flows when the device is biased in reverse. During measurements performed in the temperature range from $10to300K$⁠, the devices maintain high reproducibility. More importantly, even after exposure to air, the rectifying characteristic keeps stable, which strongly suggests that ideal $p-n$ junction diodes can be fabricated by SWCNTs.