Hydrogenated amorphous silicon is regarded as a model system in mechanistic studies of amorphous semiconductor film growth, where the key reactive site is generally considered to be a surface “dangling bond.” Employing an ultrahigh- monolithic optical resonator, the authors probe the creation of dangling-bond defects during growth of from a predominantly radical flux by detecting the associated near-IR subgap absorption with evanescent wave cavity ringdown spectroscopy. They find the apparent dangling-bond creation rate and steady-state surface density to be considerably lower than expected from dangling-bond-based growth mechanisms.
REFERENCES
1.
A.
Shah
, P.
Torres
, R.
Tscharner
, N.
Wyrsch
, and H.
Keppner
, Science
285
, 692
(1999
).2.
G.
Ganguly
and A.
Matsuda
, Phys. Rev. B
47
, 3661
(1993
).3.
J.
Perrin
, M.
Shiratani
, P.
Kae-Nune
, H.
Videlot
, J.
Jolly
, and J.
Guillon
, J. Vac. Sci. Technol. A
16
, 278
(1998
).4.
W. M. M.
Kessels
, A. H. M.
Smets
, D. C.
Marra
, E. S.
Aydil
, D. C.
Schram
, and M. C. M.
van de Sanden
, Thin Solid Films
383
, 154
(2001
).5.
S. M.
Gates
and S. K.
Kulkarni
, Appl. Phys. Lett.
58
, 2963
(1991
).6.
Y.
Toyoshima
, K.
Arai
, A.
Matsuda
, and K.
Tanaka
, J. Non-Cryst. Solids
137
, 765
(1991
).7.
T.
Umeda
, S.
Yamasaki
, J.
Isoya
, and K.
Tanaka
, Phys. Rev. B
59
, 4849
(1999
).8.
W. B.
Jackson
, D. K.
Biegelsen
, R. J.
Nemanich
, and J. C.
Knights
, Appl. Phys. Lett.
42
, 105
(1983
).9.
M.
Vanecek
, J.
Kocka
, A.
Poruba
, and A.
Fejfar
, J. Appl. Phys.
78
, 6203
(1995
).10.
S.
Yamasaki
, T.
Umeda
, J.
Isoya
, and K.
Tanaka
, Appl. Phys. Lett.
70
, 1137
(1997
).11.
I. M. P.
Aarts
, B.
Hoex
, A. H. M.
Smets
, R.
Engeln
, W. M. M.
Kessels
, and M. C. M.
van de Sanden
, Appl. Phys. Lett.
84
, 3079
(2004
).12.
N.
Wyrsch
, F.
Finger
, T. J.
Mcmahon
, and M.
Vanecek
, J. Non-Cryst. Solids
137
, 347
(1991
).13.
A. C. R.
Pipino
, Phys. Rev. Lett.
83
, 3093
(1999
).14.
I. M. P.
Aarts
, A. C. R.
Pipino
, J. P. M.
Hoefnagels
, W. M. M.
Kessels
, and M. C. M.
van de Sanden
, Phys. Rev. Lett.
95
, 166104
(2005
).15.
M.
Borselli
, T. J.
Johnson
, and O.
Painter
, Appl. Phys. Lett.
88
, 131114
(2006
).16.
E. C.
Molenbroek
, A. H.
Mahan
, and A.
Gallagher
, J. Appl. Phys.
82
, 1909
(1997
).17.
D. L.
Staebler
and C. R.
Wronski
, Appl. Phys. Lett.
31
, 292
(1977
).18.
19.
A.
von Keudell
and J. R.
Abelson
, Phys. Rev. B
59
, 5791
(1999
).20.
S.
Agarwal
, M. S.
Valipa
, B.
Hoex
, M. C. M.
van de Sanden
, D.
Maroudas
, and E. S.
Aydil
, Surf. Sci.
598
, 35
(2005
).© 2007 American Institute of Physics.
2007
American Institute of Physics
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