Data are presented on the transistor laser with collector bias and photon-assisted tunneling causing, under the constraints IE+IB+IC=0(α=ΔICΔIE) and α1, breakdown and negative resistance effects in the IC-VCE characteristics. Collector bias, aided by photon-assisted tunneling (Franz—Keldysh absorption), supplies holes to the n-p-n transistor base by tunneling escape of electrons (ΔIB=0), “feeding” quantum-well recombination radiation (generation and regeneration, ΔIE=ΔIC=ΔIhv) and yielding the negative resistance/switching condition α1 (α=ΔICΔIE, ΔIC=ΔIE, ΔIB=0, IE+IB+IC=0), and, as a consequence, corners, negative resistance, switching, vertical collector current (ΔVCE0), spectral change, and mode hopping effects in the IC-VCE characteristics.

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