Data are presented on the transistor laser with collector bias and photon-assisted tunneling causing, under the constraints and , breakdown and negative resistance effects in the characteristics. Collector bias, aided by photon-assisted tunneling (Franz—Keldysh absorption), supplies holes to the transistor base by tunneling escape of electrons , “feeding” quantum-well recombination radiation (generation and regeneration, ) and yielding the negative resistance/switching condition (, , , ), and, as a consequence, corners, negative resistance, switching, vertical collector current , spectral change, and mode hopping effects in the characteristics.
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Research Article| April 11 2007
Photon-assisted breakdown, negative resistance, and switching in a quantum-well transistor laser
A. James, G. Walter, M. Feng, N. Holonyak; Photon-assisted breakdown, negative resistance, and switching in a quantum-well transistor laser. Appl. Phys. Lett. 9 April 2007; 90 (15): 152109. https://doi.org/10.1063/1.2721364
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