Photon-assisted breakdown, negative resistance, and switching in a quantum-well transistor laser

Data are presented on the transistor laser with collector bias and photon-assisted tunneling causing, under the constraints $IE+IB+IC=0$ $(α=ΔIC∕ΔIE)$ and $α→1$⁠, breakdown and negative resistance effects in the $IC-VCE$ characteristics. Collector bias, aided by photon-assisted tunneling (Franz—Keldysh absorption), supplies holes to the $n-p-n$ transistor base by tunneling escape of electrons $(ΔIB=0)$⁠, “feeding” quantum-well recombination radiation (generation and regeneration, $ΔIE=ΔIC=ΔIhv$⁠) and yielding the negative resistance/switching condition $α→1$ (⁠$α=ΔIC∕ΔIE$⁠, $ΔIC=ΔIE$⁠, $ΔIB=0$⁠, $IE+IB+IC=0$⁠), and, as a consequence, corners, negative resistance, switching, vertical collector current $(ΔVCE≈0)$⁠, spectral change, and mode hopping effects in the $IC-VCE$ characteristics.