A five-terminal electronic switching device based on gate-controlled transport anisotropy is proposed. By means of the gate voltage, two output voltages can be contrariwise adjusted to values between the two input voltages, yielding a possible logic application as an exchange gate. Nanostructures, in the form of modulation-doped, self-organized InAs quantum wires embedded in InP are investigated and shown to be a candidate for implementation of this device.

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This is the configuration used in the van der Pauw structure for the Hall measurement.

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The actual gate voltage in the experiment range was from +1to3V. This fact, however, does not invalidate the following discussion which is based on the ratio of the applied source voltage at S2 and gate potential. In reality, optimizing the gate dielectrics (thinner, higher dielectric constant) can reduce the gate voltage range required to achieve the same effect.

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