Two common hole transporting materials, 4,4,4-tris(N-3-methylphenyl-N-phenyl-amino) triphenylamine (MTDATA) and N,N-diphenyl-N,N-bis(1-naphthyl) (1,1-biphenyl)-4,4diamine (NPB), and a p-type dopant tetrafluorotetracyanoquinodimethane (F4-TCNQ) were used to build various hole-only heterojunction devices. Both experimental results and theoretical modeling show that the current flow in such devices is limited by the heterojunction potential barrier or band offset at the MTDATA/NPB interface. It was found that the device current flow can be modulated to increase or decrease dramatically by introducing a 2nmp-doped NPB:F4-TCNQ or MTDATA:F4-TCNQ interlayer, respectively. The observed phenomena were discussed using quasi-Fermi energy level realignment at the doped/undoped organic-organic interface.

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