The authors have demonstrated an effective method to obtain high light output power of GaN-based light-emitting diodes (LEDs) by simultaneous enhancement of internal quantum efficiency and light extraction efficiency. Micropit InGaNGaN LEDs were fabricated on hexagonal-shaped GaN template through wet-etched substrate patterning. The result indicated that under optimized growth condition of high temperature GaN template, micropits could be formed and distributed in an aligned manner by growing on wet-etch patterned sapphire substrate. The LED structures showed superior optical output power, which directly resulted from not only effective elimination of threading dislocation of the epitaxial layers but also significant increase in light extraction efficiency via the inclined facets of aligned micropits.

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