The authors have fabricated undoped p-channel GaAsAlxGa1xAs heterostructure field-effect transistors with nearly ideal drain current-voltage characteristics, using atomic-layer-deposited Al2O3 as the dielectric, and measured their transport properties. At 0.3K, the densities and mobilities of the two dimensional holes can be tuned up to 2.9×1011cm2 and 6.4×105cm2Vs, respectively. The variable density high mobility two-dimensional hole system provides a large parameter space for the study of two-dimensional physics.

1.
M.
Shayegan
, e-print cond-mat/0505520.
2.
R. C.
Eden
,
Technical Digest of the 25th Annual IEEE GaAs IC Symposium
,
2003
(unpublished), p.
7
.
3.
B. E.
Kane
,
L. N.
Pfeiffer
,
K. W.
West
, and
C. K.
Harnett
,
Appl. Phys. Lett.
63
,
2132
(
1993
).
4.
B. E.
Kane
,
L. N.
Pfeiffer
, and
K. W.
West
,
Appl. Phys. Lett.
67
,
1262
(
1995
).
5.
C. L.
Chen
,
L. J.
Mahoney
,
K. B.
Nichols
,
E. R.
Brown
, and
B. F.
Gramstorff
,
IEEE Electron Device Lett.
17
,
413
(
1996
).
6.
N.
Furuhata
,
M.
Fujii
,
S.
Asai
,
T.
Maeda
, and
Y.
Ohno
,
Solid-State Electron.
42
,
1049
(
1998
).
7.
T.
Saku
,
K.
Muraki
, and
Y.
Hirayama
,
Jpn. J. Appl. Phys., Part 2
37
,
L765
(
1998
).
8.
W. R.
Clarke
,
A. P.
Micolich
,
A. R.
Hamilton
, and
M. Y.
Simmons
,
J. Appl. Phys.
99
,
023707
(
2006
).
9.
R. L.
Willett
,
L. N.
Pfeiffer
, and
K. W.
West
,
Appl. Phys. Lett.
89
,
242107
(
2006
).
10.
K. L.
Seaward
,
Appl. Phys. Lett.
61
,
3002
(
1992
).
11.
S. J.
Pearton
,
F.
Ren
,
J. R.
Lothian
,
T. R.
Fullowan
,
R. F.
Kopf
,
U. K.
Chakrabarti
,
S. P.
Hui
,
A. B.
Emerson
,
R. L.
Kostelak
, and
S. S.
Pei
,
J. Vac. Sci. Technol. B
9
,
2487
(
1991
).
12.
P. D.
Ye
,
G. D.
Wilk
,
J.
Kwo
,
B.
Yang
,
H.-J. L.
Gossmann
,
M.
Frei
,
S. N. G.
Chu
,
J. P.
Mannaerts
,
M.
Sergent
,
M.
Hong
,
K.
Ng
, and
J.
Bude
,
IEEE Electron Device Lett.
24
,
209
(
2003
).
13.
P. D.
Ye
,
G. D.
Wilk
,
E. E.
Tois
, and
J. J.
Wang
,
Appl. Phys. Lett.
87
,
013501
(
2005
).
14.
Y. P.
Li
,
T.
Sajoto
,
L. W.
Engel
,
D. C.
Tsui
, and
M.
Shayegan
,
Phys. Rev. B
47
,
9933
(
1993
).
15.
M.
Shayegan
,
V. J.
Goldman
,
C.
Jiang
,
T.
Sajoto
, and
M.
Santos
,
Appl. Phys. Lett.
52
,
1086
(
1988
).
16.
J. P.
Eisenstein
,
H. L.
Stormer
,
V.
Narayanamurti
,
A. C.
Gossard
, and
W.
Wiegmann
,
Phys. Rev. Lett.
53
,
2579
(
1984
).
You do not currently have access to this content.