Comparable microcavities with active regions containing distributed (In,Ga)N quantum wells, grown on GaN substrates and bounded by two dielectric mirrors, have been fabricated by two different routes: one using laser lift-off to process structures grown on GaN-on-sapphire templates and the second using freestanding GaN substrates, which are initially processed by mechanical thinning. Both exploit the properties of an layer, lattice matched to the GaN substrate and spacer layers. In both cases cavity quality factors are demonstrated by measurements of the cavity-filtered room-temperature excitonic emission near .
microcavities with double dielectric mirrors fabricated by selective removal of an (Al,In)N sacrificial layer
F. Rizzi, P. R. Edwards, K. Bejtka, F. Semond, X. N. Kang, G. Y. Zhang, E. Gu, M. D. Dawson, I. M. Watson, R. W. Martin; microcavities with double dielectric mirrors fabricated by selective removal of an (Al,In)N sacrificial layer. Appl. Phys. Lett. 12 March 2007; 90 (11): 111112. https://doi.org/10.1063/1.2712786
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