The hemispherical semi-insulating GaAs photodetector operating at 1.3μm is presented. The GaAs hemisphere was used both as a detector and a solid immersion lens to improve the responsivity. The physical mechanism of the detector is attributed to double-frequency absorption (DFA) confirmed by the measured photocurrent quadratically dependent on the incident optical power and nonlinearly dependent on the bias and by the relationship between the photocurrent and the azimuth in agreement with the anisotropy of DFA in GaAs single crystal.

1.
F. W.
Smith
,
H. Q.
Le
,
V.
Diadiuk
,
M. A.
Hollis
, and
A. R.
Calawa
,
Appl. Phys. Lett.
54
,
890
(
1989
).
2.
H.
Erlig
,
S.
Wang
,
T.
Azfar
,
A.
Udupa
,
H. R.
Fetterman
, and
D. C.
Streit
,
Electron. Lett.
35
,
173
(
1999
).
3.
Masahiko
Tani
,
Kwang-Su
Lee
, and
X.-C.
Zhang
,
Appl. Phys. Lett.
77
,
1396
(
2000
).
4.
L. P.
Barry
,
P. G.
Bollond
,
J. M.
Dudley
,
J. D.
Harvey
, and
T.
Leonhardt
,
Electron. Lett.
32
,
1922
(
1996
).
5.
T. K.
Liang
,
H. K.
Tsang
,
I. E.
Day
,
J.
Drake
,
A. P.
Knights
, and
M.
Asghari
,
Appl. Phys. Lett.
81
,
1323
(
2002
).
6.
D. A.
Fletcher
,
K. B.
Crozier
,
C. F.
Quate
,
G. S.
Kino
,
K. E.
Goodson
,
D.
Simanovskii
, and
D. V.
Palanker
,
Appl. Phys. Lett.
77
,
2109
(
2000
).
7.
Chen
Zhanguo
,
Jia
Gang
, and
Yi
Maobin
,
J. Phys. D
34
,
3078
(
2001
).
8.
D. T.
Reid
,
M.
Padgett
,
C.
McGowan
,
W. E.
Sleat
, and
W.
Sibbett
,
Opt. Lett.
22
,
233
(
1997
).
9.
Liu
Xiuhuan
,
Chen
Zhanguo
,
Jia
Gang
,
Zhang
Xiaoting
, and
Zhang
Yuhong
,
Acta Opt. Sin.
25
,
1391
(
2005
).
10.
Shi
Wei
,
Dai
Huiying
, and
Zhang
Xianbin
,
Chin. J. Semicond.
26
,
460
(
2005
).
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