The hemispherical semi-insulating GaAs photodetector operating at is presented. The GaAs hemisphere was used both as a detector and a solid immersion lens to improve the responsivity. The physical mechanism of the detector is attributed to double-frequency absorption (DFA) confirmed by the measured photocurrent quadratically dependent on the incident optical power and nonlinearly dependent on the bias and by the relationship between the photocurrent and the azimuth in agreement with the anisotropy of DFA in GaAs single crystal.
Hemispherical semi-insulating GaAs double-frequency absorption photodetector operating at wavelength
Xiuhuan Liu, Bao Shi, Gang Jia, Zhanguo Chen, Ce Ren, Yuhong Zhang, Kun Cao, Jianxun Zhao; Hemispherical semi-insulating GaAs double-frequency absorption photodetector operating at wavelength. Appl. Phys. Lett. 5 March 2007; 90 (10): 101109. https://doi.org/10.1063/1.2711760
Download citation file: