The strain evolution in metal organic chemical vapor deposition growth of GaN on Si (111) substrate with an AlN interlayer is studied. During the growth of GaN film on AlN interlayer, the growth stress changes from compression to tension. The study shows that the density of V trenches in the AlN interlayer surface and the threading dislocations generated in the AlN interlayer have a significant influence on this strain evolution process. The dislocations generated in AlN interlayer may thread across the interface and play a key role in the strain evolution process of the GaN layer grown on AlN interlayer.
Influence of the AlN interlayer crystal quality on the strain evolution of GaN layer grown on Si (111)
W. Liu, J. J. Zhu, D. S. Jiang, H. Yang, J. F. Wang; Influence of the AlN interlayer crystal quality on the strain evolution of GaN layer grown on Si (111). Appl. Phys. Lett. 1 January 2007; 90 (1): 011914. https://doi.org/10.1063/1.2430396
Download citation file: