The authors report the observation of both acceptor- and donorlike defects in ZnO by deep level transient spectroscopy. The observation is facilitated by using a p-n junction allowing the injection of holes and electrons. The junction is realized by implanting a n-conducting ZnO wafer grown by pressurized melt growth with nitrogen ions. The authors found the commonly observed donorlike defects E1 and E3 and two acceptorlike defects A2 and A3, as well as a broad acceptorlike defect band. The thermal activation energies of A2 and A3, were determined to be about 150 and 280meV, respectively.

1.
R.
Schmidt
,
B.
Rheinländer
,
M.
Schubert
,
D.
Spemann
,
T.
Butz
,
E.
Kaidashev
,
M.
Lorenz
,
A.
Rahm
,
H.
Semmelhack
, and
M.
Grundmann
,
Appl. Phys. Lett.
82
,
2260
(
2003
).
2.
D.
Look
,
D.
Reynolds
,
Z.-Q.
Fang
,
J.
Hemsky
,
J.
Sizelove
, and
R.
Jones
,
Mater. Sci. Eng., B
66
,
30
(
1999
).
3.
4.
M.
Lorenz
,
E.
Kaidashev
,
H. v.
Wenckstern
,
V.
Riede
,
C.
Bundesmann
,
D.
Spemann
,
G.
Benndorf
,
H.
Hochmuth
,
A.
Rahm
,
H.
Semmelhack
, and
M.
Grundmann
,
Solid-State Electron.
47
,
2205
(
2003
).
5.
M.
Vellekoop
,
C.
Visser
, and
P. M.
Sarro
,
Sens. Actuators, A
23
,
1027
(
1990
).
6.
A.
Tsukazaki
,
A.
Ohtomo
,
T.
Onuma
,
M.
Ohtani
,
T.
Makino
,
M.
Sumiya
,
K.
Ohtani
,
S.
Chichibu
,
S.
Fuke
,
Y.
Segawa
,
H.
Ohno
,
H.
Koinuma
, and
M.
Kawasaki
,
Nat. Mater.
4
,
42
(
2005
).
7.
F.
Zhuge
,
L.
Zhu
,
Z.
Ye
,
D.
Ma
,
J.
Lu
,
J.
Huang
,
F.
Wang
,
Z.
Ji
, and
S.
Zhang
,
Appl. Phys. Lett.
87
,
092103
(
2005
).
8.
D.-K.
Hwang
,
H.-S.
Kim
,
J.-H.
Lim
,
J.-Y.
Oh
,
J.-H.
Yang
,
S.-J.
Park
,
D.
Look
, and
Y.
Park
,
Appl. Phys. Lett.
86
,
151917
(
2005
).
9.
D.
Look
,
Semicond. Sci. Technol.
20
,
S55
(
2005
).
10.
F. D.
Auret
,
S. A.
Goodman
,
M.
Hayes
,
M. J.
Legodi
,
H. A.
van Laarhoven
, and
D. C.
Look
,
Appl. Phys. Lett.
79
,
3074
(
2001
).
11.
F. D.
Auret
,
S. A.
Goodman
,
M. J.
Legodi
,
W. E.
Meyer
, and
D. C.
Look
,
Appl. Phys. Lett.
80
,
1340
(
2002
).
12.
A. Y.
Polyakov
,
N. B.
Smirnov
,
E. A.
Kozhukhova
,
V. I.
Vdovin
,
K.
Ip
,
Y. W.
Heo
,
D. P.
Norton
, and
S. J.
Pearton
,
Appl. Phys. Lett.
83
,
1575
(
2003
).
13.
F. D.
Auret
,
L.
Wu
,
W. E.
Meyer
,
J.
Nel
,
M. J.
Legodi
, and
M.
Hayes
,
Phys. Status Solidi C
1
,
674
(
2004
).
14.
J.
Nel
,
F.
Auret
,
L.
Wu
,
M.
Legodi
,
W.
Meyer
, and
M.
Hayes
,
Sens. Actuators B
100
,
270
(
2004
).
15.
H.
von Wenckstern
,
S.
Weinhold
,
G.
Biehne
,
R.
Pickenhain
,
H.
Schmidt
,
H.
Hochmuth
, and
M.
Grundmann
,
Donor Levels in ZnO
,
Advances in Solid State Physics
Vol.
45
(
Springer
,
Berlin
,
2005
), p.
263
, .
16.
J.
Ziegler
,
J. P.
Biersack
, and
U.
Littmark
,
The Stopping and Range of Ions in Solids
(
Pergamon
,
New York
,
1985
).
17.
D. B.
Jackson
and
C. T.
Sah
,
J. Appl. Phys.
58
,
1270
(
1985
).
18.
L.
Stolt
and
K.
Bohlin
,
Solid-State Electron.
28
,
1215
(
1985
).
19.
F. D.
Auret
and
M.
Nel
,
J. Appl. Phys.
61
,
2546
(
1986
).
20.
A.
Krtschil
,
A.
Dadgar
,
N.
Oleynik
,
J.
Blasing
,
A.
Diez
, and
A.
Krost
,
Appl. Phys. Lett.
87
,
262105
(
2005
).
21.
B.
Claflin
,
D.
Look
,
S.
Park
,
J. Cryst. Growth
and
G.
Cantwell
,
287
,
16
(
2006
).
22.
G.
Brauer
,
W.
Anwand
,
W.
Skorupa
,
J.
Kuriplach
,
O.
Melikhova
,
C.
Moisson
,
H.
von Wenckstern
,
H.
Schmidt
,
M.
Lorenz
, and
M.
Grundmann
,
Phys. Rev B
74
,
045208
(
2006
).
23.
C.
van Opdorp
,
Solid-State Electron.
11
,
397
(
1968
).
24.
F.
Reuss
,
C.
Kirchner
,
T.
Gruber
,
R.
Kling
,
S.
Maschek
,
W.
Limmer
,
A.
Waag
, and
P.
Ziemann
,
J. Appl. Phys.
95
,
3385
(
2004
).
25.
A. N.
Georgobiani
,
A. N.
Gruzintsev
,
V. T.
Volkov
,
M. O.
Vorob’ev
, and
V. A.
Dravin
,
Russian Microelectronics
33
,
165
(
2004
).
26.
A. Y.
Polyakov
,
N. B.
Smirnov
,
A. V.
Govorkov
,
E. A.
Kozhukhova
,
V. I.
Vdovin
,
K.
Ip
,
M. E.
Overberg
,
Y. W.
Heo
,
D. P.
Norton
,
S. J.
Pearton
,
J. M.
Zavada
, and
V. A.
Dravin
,
J. Appl. Phys.
94
,
2895
(
2003
).
27.
O.
Lopatiuk
,
L.
Chernyak
,
A.
Osinsky
, and
J. Q.
Xie
,
Appl. Phys. Lett.
87
,
214110
(
2005
).
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