Deep ultraviolet photoluminescence (PL) spectroscopy has been employed to investigate impurity transitions in Si doped Al-rich AlGaN alloys. In addition to the previously reported donor compensating centers—isolated cation vacancy with three negative charges and cation vacancy complex with two-negative charges —a group of impurity transitions with higher emission energies has been observed in AlGaN alloys grown under different conditions, which has been assigned to the recombination between shallow donors and cation vacancy complexes with one-negative charge . Similar to and , the energy levels of deep acceptors in alloys are pinned to a common energy level in vacuum. A strong correlation between the resistivity and PL emission intensities of the impurity transitions associated with cation vacancies (and complexes) was found.
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28 August 2006
Research Article|
August 29 2006
Photoluminescence studies of impurity transitions in AlGaN alloys Available to Purchase
N. Nepal;
N. Nepal
Department of Physics,
Kansas State University
, Manhattan, Kansas 66506-2601
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M. L. Nakarmi;
M. L. Nakarmi
Department of Physics,
Kansas State University
, Manhattan, Kansas 66506-2601
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J. Y. Lin;
J. Y. Lin
Department of Physics,
Kansas State University
, Manhattan, Kansas 66506-2601
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H. X. Jiang
H. X. Jiang
a)
Department of Physics,
Kansas State University
, Manhattan, Kansas 66506-2601
Search for other works by this author on:
N. Nepal
Department of Physics,
Kansas State University
, Manhattan, Kansas 66506-2601
M. L. Nakarmi
Department of Physics,
Kansas State University
, Manhattan, Kansas 66506-2601
J. Y. Lin
Department of Physics,
Kansas State University
, Manhattan, Kansas 66506-2601
H. X. Jiang
a)
Department of Physics,
Kansas State University
, Manhattan, Kansas 66506-2601a)
Electronic mail: [email protected]
Appl. Phys. Lett. 89, 092107 (2006)
Article history
Received:
April 11 2006
Accepted:
June 29 2006
Citation
N. Nepal, M. L. Nakarmi, J. Y. Lin, H. X. Jiang; Photoluminescence studies of impurity transitions in AlGaN alloys. Appl. Phys. Lett. 28 August 2006; 89 (9): 092107. https://doi.org/10.1063/1.2337856
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