The authors have fabricated and studied a ballistic one-dimensional -type quantum wire using an undoped heterostructure. The absence of modulation doping eliminates remote ionized impurity scattering and allows high mobilities to be achieved over a wide range of hole densities and, in particular, at very low densities where carrier-carrier interactions are strongest. The device exhibits clear quantized conductance plateaus with highly stable gate characteristics. These devices provide opportunities for studying spin-orbit coupling and interaction effects in mesoscopic hole systems in the strong interaction regime where .
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We use the 2D definition of , where is the effective mass of holes in GaAs, is the 2D hole density, is the electron charge, is the relative permittivity of GaAs, and is the free electron mass.
