Electrical properties of single-walled carbon nanotubes (SWCNTs) filled with Fe are studied by fabricating them as the channels of field-effect transistor devices. The synthesis of Fe-filled SWCNTs is realized by using ferrocene as the starting material. Our results reveal that ferrocene-filled SWCNTs show the interesting ambipolar behavior. In contrast, Fe-filled SWCNTs can exhibit high performance unipolar n-type semiconducting characteristics, suggesting the possibility of creating ferromagnetic semiconducting SWCNTs. Moreover, Coulomb blockade oscillations are significantly observed on Fe-filled SWCNTs, which indicates that they exhibit excellent single-electron transistor characteristics at low temperatures.

1.
S. J.
Tans
,
A. R. M.
Verschueren
, and
C.
Dekker
,
Nature (London)
393
,
49
(
1998
).
2.
R.
Martel
,
T.
Schmidt
,
H. R.
Shea
,
T.
Hertel
, and
Ph.
Avouris
,
Appl. Phys. Lett.
73
,
2447
(
1998
).
3.
M.
Bockrath
,
D. H.
Cobden
,
P. L.
McEuen
,
N. G.
Chopra
,
A.
Zettl
,
A.
Thess
, and
R. E.
Smalley
,
Science
275
,
1922
(
1997
).
4.
A.
Javey
,
R.
Tu
,
D. B.
Farmer
,
J.
Guo
,
R. G.
Gordon
, and
H. J.
Dai
,
Nano Lett.
5
,
345
(
2005
).
5.
J.
Kong
,
C.
Zhou
,
E.
Yenilmez
, and
H. J.
Dai
,
Appl. Phys. Lett.
77
,
3977
(
2000
).
6.
T.
Takenobu
,
T.
Takano
,
M.
Shiraishi
,
Y.
Murakami
,
M.
Ata
,
H.
Kataura
,
Y.
Achiba
, and
Y.
Iwasa
,
Nat. Mater.
2
,
683
(
2003
).
7.
M.
Radosavljevic
,
M.
Freitag
,
K. V.
Thadani
, and
A. T.
Johnson
,
Nano Lett.
2
,
761
(
2002
).
8.
A.
Javey
,
M.
Shim
, and
H. J.
Dai
,
Appl. Phys. Lett.
80
,
1064
(
2002
).
9.
A.
Jensen
,
J. R.
Hauptmann
,
J.
Nygård
, and
P. E.
Lindelof
,
Phys. Rev. B
72
,
035419
(
2005
).
10.
Y. J.
Kang
,
J.
Choi
,
C. Y.
Moon
, and
K. J.
Chang
,
Phys. Rev. B
71
,
115441
(
2005
).
11.
K.
Tohji
,
T.
Goto
,
H.
Takahashi
,
Y.
Shinoda
,
N.
Shimizu
,
B.
Jeyadevan
,
I.
Matsuoka
,
Y.
Saito
,
A.
Kasuya
,
T.
Ohsuna
,
K.
Hiraga
, and
Y.
Nishina
,
Nature (London)
383
,
679
(
1996
).
12.
T.
Izumida
,
G. H.
Jeong
,
Y.
Neo
,
T.
Hirata
,
R.
Hatakeyama
,
H.
Mimura
,
K.
Omote
, and
Y.
Kasama
,
Jpn. J. Appl. Phys., Part 1
44
,
1606
(
2005
).
13.
Y.
Taur
and
T.
Ning
,
Fundamentals of Modern VLSI Devices
(
Cambridge University Press
,
Cambridge
,
1998
).
14.
C. W.
Zhou
,
J.
Kong
,
E.
Yenilmez
, and
H. J.
Dai
,
Science
290
,
1552
(
2000
).
15.
J. S.
Bunch
,
Y.
Yaish
,
M.
Brink
,
K.
Bolotin
, and
P. L.
McEuen
,
Nano Lett.
5
,
287
(
2005
).
16.
A.
Bezryadin
,
A. R. M.
Verschueren
,
S. J.
Tan
, and
C.
Dekker
,
Phys. Rev. Lett.
80
,
4036
(
1998
).
You do not currently have access to this content.