The aim of this letter is to calculate the mechanical grinding induced bow and stress in ultrathin silicon wafers. The reverse leakage current of a junction diode fabricated on a silicon wafer was measured for wafers thinned to various thicknesses. A correlation with the residual stress was obtained through band gap narrowing effect. The analytical results were compared with experimental bow measurements using a laser profiler. The bow in thick wafer was found to be less than using the current grinding process.
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.© 2006 American Institute of Physics.
2006
American Institute of Physics
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