The authors demonstrate that the compound grown epitaxially on Si(100) by molecular-beam epitaxy is a potential gate dielectric to fabricate - and -metal-oxide semiconductor field-effect transistors with equivalent oxide thickness (EOT) below . The electrical properties on capacitors and transistors show low gate leakage and good capacitance and output characteristics. The lower electron and hole mobilities, which are strongly limited by charge trapping, nevertheless fit well with the general trend of channel mobility reduction with decreasing EOT.
Field-effect transistors with as gate oxide
C. Rossel, B. Mereu, C. Marchiori, D. Caimi, M. Sousa, A. Guiller, H. Siegwart, R. Germann, J.-P. Locquet, J. Fompeyrine, D. J. Webb, Ch. Dieker, Jin Won Seo; Field-effect transistors with as gate oxide. Appl. Phys. Lett. 31 July 2006; 89 (5): 053506. https://doi.org/10.1063/1.2236464
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