Field-effect transistors with $SrHfO3$ as gate oxide

The authors demonstrate that the compound $SrHfO3$ grown epitaxially on Si(100) by molecular-beam epitaxy is a potential gate dielectric to fabricate $n$- and $p$-metal-oxide semiconductor field-effect transistors with equivalent oxide thickness (EOT) below $1nm$⁠. The electrical properties on capacitors and transistors show low gate leakage and good capacitance and $I-V$ output characteristics. The lower electron and hole mobilities, which are strongly limited by charge trapping, nevertheless fit well with the general trend of channel mobility reduction with decreasing EOT.