Field effect induced luminescence has been achieved by alternate tunnel injection of electrons and holes into Si nanocrystals. The emitting device is a metal-oxide-semiconductor structure with a semitransparent polycrystalline Si contact thick and a silicon-rich silicon oxide layer of about deposited on a -type Si substrate by plasma-enhanced chemical vapor deposition. The electroluminescence is optimized for a Si excess of 17% and annealing at for in nitrogen-rich atmosphere. The pulsed emission presents typical decay times of and external quantum efficiencies of .
Field effect luminescence from Si nanocrystals obtained by plasma-enhanced chemical vapor deposition
M. Perálvarez, C. García, M. López, B. Garrido, J. Barreto, C. Domínguez, J. A. Rodríguez; Field effect luminescence from Si nanocrystals obtained by plasma-enhanced chemical vapor deposition. Appl. Phys. Lett. 31 July 2006; 89 (5): 051112. https://doi.org/10.1063/1.2268706
Download citation file: