Field effect luminescence from Si nanocrystals obtained by plasma-enhanced chemical vapor deposition

Field effect induced luminescence has been achieved by alternate tunnel injection of electrons and holes into Si nanocrystals. The emitting device is a metal-oxide-semiconductor structure with a semitransparent polycrystalline Si contact $∼250nm$ thick and a silicon-rich silicon oxide layer of about $40nm$ deposited on a $p$-type Si substrate by plasma-enhanced chemical vapor deposition. The electroluminescence is optimized for a Si excess of 17% and annealing at $1250°C$ for $1h$ in nitrogen-rich atmosphere. The pulsed emission presents typical decay times of $∼5μs$ and external quantum efficiencies of $∼0.03%$⁠.