Strain monitoring in $InAs–AlxGa1−xAsySb1−y$ structures grown by molecular beam epitaxy

A study of strained $InAs–AlxGa1−xAsySb1−y$ quantum well structures produced by molecular beam epitaxy is presented. The ability to manipulate quantum well strain by way of the $AlxGa1−xAsySb1−y$ buffer is examined using statistical experimental design. Results show that anion composition in the buffer (with a target lattice constant, $a=6.12Å$⁠) varies by as much as 3% in the $450–500°C$ growth temperature range. The data reveal interrelationships between strain, structural characteristics, and conductivity. Results demonstrate that these relationships exist and can be modeled empirically and exploited for the design of near-infrared optoelectronic devices.