Conductive-atomic force microscopy is used to electrically characterize a nanometric metal- system with Au nanocluster inclusions in . The system shows a marked rectifying behavior at room temperature with a threshold voltage function of the cluster size. This behavior is interpreted crossing physical considerations on metal-oxide-semiconductor structure and on double barrier tunnel junction device. The system fabricated and analyzed is proposed as a possible basic component for nanoelectronic circuits working at room temperature.
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.© 2006 American Institute of Physics.
2006
American Institute of Physics
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