Electron transient transport in an InxGa1xAs-based (x=0.53)p-i-n nanostructure under the application of an electric field has been studied by time-resolved Raman spectroscopy on a subpicosecond time scale and at T=300K. The experimental results reveal the time evolution of the electron distribution function and electron drift velocity with subpicosecond time resolution. These experimental results are compared with those of both InP-based and GaAs-based p-i-n nanostructures and provide a consistent understanding and better insight of electron transient transport phenomena in semiconductors.

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