Molecular beam epitaxy of phase pure cubic InN

Cubic InN layers were grown by plasma assisted molecular beam epitaxy on $3C-SiC$ (001) substrates at growth temperatures from $419to490°C$⁠. X-ray diffraction investigations show that the layers have zinc blende structure with only a small fraction of wurtzite phase inclusions on the (111) facets of the cubic layer. The full width at half maximum of the $c-InN$ (002) x-ray rocking curve is less than $50arcmin$⁠. The lattice constant is $5.01±0.01Å$⁠. Low temperature photoluminescence measurements yield a $c-InN$ band gap of $0.61eV$⁠. At room temperature the band gap is about $0.56eV$ and the free electron concentration is about $n∼1.7×1019cm−3$⁠.