Ultrashallow $(<10nm)$ $p+∕n$ junction formed by $B18H22$ cluster ion implantation and excimer laser annealing Available to Purchase

In order to form an ultrashallow $p+∕n$ junction, incorporation of a top amorphous-silicon $(a-Si)$ layer is necessary so as to avoid channeling and to fully activate the dopant. Conventional ultrashallow junction processes require two-step implantation such as preamorphization by $Si+$ or $Ge+$ implantation and ultralow $(<0.5keV)$ energy $B+$ implantation. In this report, the authors investigate $B18H22+$ implantation. Due to the heavy mass of cluster ions, one-step ion implantation at $5keV$ readily forms a $5-nm$-thick $a-Si$ layer and an ultrashallow junction without B channeling. By employing excimer laser annealing, the authors have obtained a shallow junction depth $(∼9nm)$ and low $Rs$ $(∼830Ω∕◻)$⁠.