(Au nanocluster)/6H-SiC Schottky contacts were electrically characterized by conductive atomic force microscopy, collecting a high number of current-voltage (I-V) curves. The main observed result is the Schottky barrier height (SBH) dependence on the cluster size. The SBH increases from 1.35±0.01to1.77±0.01eV when the cluster size increases from 1.5to6.8nm and it tends, asymptotically, to the theoretical SBH of the macroscopic contact AuSiC(1.9eV). This behavior is interpreted considering the thermoionic transport theory through the Au cluster/SiC barrier coupled with the concept of ballistic transport within few electron quantum dots.

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