An electronic method to measure the drift velocity and mobility of charge carriers in polymer thin film transistor has been developed. The measurement is based on the movement of a packet of carriers injected into the channel. This technique can be used to explore trap states and therefore obtain a comprehensive understanding of charge transport in these materials. Drift mobility of is obtained from the transit time which is a factor of 3 higher than the field-effect transistor mobility.
Direct measurement of carrier drift velocity and mobility in a polymer field-effect transistor
Debarshi Basu, Liang Wang, Lawrence Dunn, Byungwook Yoo, Suvid Nadkarni, Ananth Dodabalapur, Martin Heeney, Iain McCulloch; Direct measurement of carrier drift velocity and mobility in a polymer field-effect transistor. Appl. Phys. Lett. 11 December 2006; 89 (24): 242104. https://doi.org/10.1063/1.2405378
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