Crystalline Si nanowires have been grown using a microelectronics-friendly solid-phase catalyst (PtSi) by chemical vapor deposition. Tapered growth occurs at high deposition temperatures due to uncatalyzed Si deposition at wire sidewalls, but this effect can be reduced at lower , while still maintaining reasonable growth rates . Electrical testing of individual nanowires using conductive atomic force microscopy on as-grown samples demonstrates that wires are conducting with intrinsic resistivities in the range.
REFERENCES
1.
M. S.
Gudiksen
, L. J.
Lauhon
, J.
Wang
, D. C.
Smith
, and C. M.
Lieber
, Nature (London)
415
, 617
(2002
).2.
T.
Bryllert
, L. E.
Wernersson
, L. E.
Froberg
, and L.
Samuelson
, IEEE Electron Device Lett.
27
, 323
(2006
).3.
T.
Baron
, A.
Fernandes
, J. F.
Damlencourt
, B.
De Salvo
, F.
Martin
, F.
Mazen
, and S.
Haukka
, Appl. Phys. Lett.
82
, 4151
(2003
).4.
B.
De Salvo
, G.
Ghibaudo
, G.
Pananakakis
, P.
Masson
, T.
Baron
, N.
Buffet
, A.
Fernandes
, and B.
Guillaumot
, IEEE Trans. Electron Devices
48
, 1789
(2001
).5.
R. S.
Wagner
and W. C.
Ellis
, Appl. Phys. Lett.
4
, 89
(1964
).6.
T. I.
Kamins
, R.
Stanley Williams
, Y.
Chen
, Y. L.
Chang
, and Y. A.
Chang
, Appl. Phys. Lett.
76
, 562
(2000
).7.
T. I.
Kamins
, R.
Stanley Williams
, D. P.
Basile
, T.
Hesjedal
, and J. S.
Harris
, J. Appl. Phys.
89
, 1008
(2001
).8.
S. P.
Murarka
, E.
Kinsbron
, D. B.
Fraser
, J. M.
Andrews
, and E. J.
Lloyd
, J. Appl. Phys.
54
, 6943
(1983
).9.
W. C.
Yang
, H.
Ade
, and R. J.
Nemanich
, Phys. Rev. B
69
, 045421
(2004
).10.
S.
Sharma
, T. I.
Kamins
, and R.
Stanley Williams
, J. Cryst. Growth
267
, 613
(2004
).11.
M.
Hansen
, Constitution of Binary Alloys
(McGraw-Hill
, New York
, 1958
).12.
© 2006 American Institute of Physics.
2006
American Institute of Physics
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