Si nanowire growth and characterization using a microelectronics-compatible catalyst: PtSi Available to Purchase

Crystalline Si nanowires have been grown using a microelectronics-friendly solid-phase catalyst (PtSi) by chemical vapor deposition. Tapered growth occurs at high deposition temperatures $(>700°C)$ due to uncatalyzed Si deposition at wire sidewalls, but this effect can be reduced at lower $T$ $(<600°C)$⁠, while still maintaining reasonable growth rates $(1μm∕h)$⁠. Electrical testing of individual nanowires using conductive atomic force microscopy on as-grown samples demonstrates that wires are conducting with intrinsic resistivities in the $10–50Ωcm$ range.