Crystalline Si nanowires have been grown using a microelectronics-friendly solid-phase catalyst (PtSi) by chemical vapor deposition. Tapered growth occurs at high deposition temperatures (>700°C) due to uncatalyzed Si deposition at wire sidewalls, but this effect can be reduced at lower T(<600°C), while still maintaining reasonable growth rates (1μmh). Electrical testing of individual nanowires using conductive atomic force microscopy on as-grown samples demonstrates that wires are conducting with intrinsic resistivities in the 1050Ωcm range.

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