Cathodoluminescence investigations of GaInNAs on $GaAs(111)B$

In this work, we present a detailed cathodoluminescence characterization of GaInNAs quantum wells grown on $GaAs(111)B$⁠. As-grown and annealed InGaAs and GaInNAs quantum wells were maeasured and compared by spatially resolved cathodoluminescence at different photon energies. In the case of GaInNAs quantum wells, an increase of the luminescence intensity, a blueshift, and an increment of the modulation depth of intensity profiles were found after rapid thermal annealing cycles. The latter is caused by the presence of nonradiative areas above the GaInNAs quantum well due to stacking faults formed during the growth.