The authors demonstrate the operation of a nanoscale field-effect sensor engineered from a functionalized silicon nanowire. With this nanofabricated sensor, the change in the hydrogen ion concentration or the value of a solution can be detected by the corresponding change in the nanowire differential conductance with a resolution of . Fabrication of selective side gates on the nanowire sensor allows field-effect control of the surface charge on the nanowire by controlling the accumulation of charge carriers with the side-gate voltage. A simple physical model is used to analyze the observed data and to quantify the dependence of the conductance on . The development of a nanoscale sensor with physically engineered gates offers the possibility of highly parallel labeling and detection of chemical and biological molecules with selective control of individual array elements.
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27 November 2006
Research Article|
November 29 2006
Silicon-based nanoelectronic field-effect sensor with local gate control
Yu Chen;
Yu Chen
Department of Physics,
Boston University
, 590 Commonwealth Avenue, Boston, Massachusetts 02215
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Xihua Wang;
Xihua Wang
Department of Physics,
Boston University
, 590 Commonwealth Avenue, Boston, Massachusetts 02215
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Shyamsunder Erramilli;
Shyamsunder Erramilli
Department of Physics,
Boston University
, 590 Commonwealth Avenue, Boston, Massachusetts 02215
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Pritiraj Mohanty;
Pritiraj Mohanty
a)
Department of Physics,
Boston University
, 590 Commonwealth Avenue, Boston, Massachusetts 02215
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Agnieszka Kalinowski
Agnieszka Kalinowski
School of Medicine,
Carnegie Mellon University
and University of Pittsburgh, Pittsburgh, Pennsylvania 15261
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Yu Chen
Xihua Wang
Shyamsunder Erramilli
Pritiraj Mohanty
a)
Agnieszka Kalinowski
Department of Physics,
Boston University
, 590 Commonwealth Avenue, Boston, Massachusetts 02215a)
Electronic mail: [email protected]
Appl. Phys. Lett. 89, 223512 (2006)
Article history
Received:
August 24 2006
Accepted:
October 06 2006
Citation
Yu Chen, Xihua Wang, Shyamsunder Erramilli, Pritiraj Mohanty, Agnieszka Kalinowski; Silicon-based nanoelectronic field-effect sensor with local gate control. Appl. Phys. Lett. 27 November 2006; 89 (22): 223512. https://doi.org/10.1063/1.2392828
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