In this work, the effect of boron concentration on the critical thickness of heavily boron doped Si1xGex alloys (Si1xyGexBy) has been studied using Raman spectroscopy. The experimental results indicate that while boron decreases the stored strain energy, it can substantially increase the critical thickness for a given Ge concentration. The Si1xyGexBy critical thickness was calculated using two different models based on energy balance and kinetic considerations. The results show that the kinetic model provides a good estimate for the Si1xyGexBy critical thickness.

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