Ferroelectric (BZT) thin films were deposited on high-resistivity Si substrate without or with inserting a high- buffer layer of . The varactor characteristics of the BZT capacitors in metal-oxide-semiconductor structure were studied. At low frequency , the capacitors exhibit a negatively tunable characteristic, i.e., , against dc bias , but opposite tunable characteristics were found at microwave frequencies . The change of voltage-dependent characteristic is attributed to the effect of low-resistivity interface induced by charged defects formed from interfacial oxidation of Si in screening the microwave from penetrating into the bulk of Si.
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