In this letter, we report on dielectric and leakage current characteristics of room temperature deposited Bi1.5Zn1.0Nb1.5O7 (BZN) films on the basis of crystallographic structure and suitability of BZN gate insulators as key building blocks in the fabrication of low voltage operating ZnO based thin-film transistors (TFTs). The BZN films exhibited a high dielectric constant (51) and good leakage current characteristics (107Acm2) at an applied voltage of 5V. All room temperature processed ZnO based TFTs using BZN gate insulator exhibited field effect mobility of 1.13cm2Vs and low voltage device performance less than 4V.

1.
I. D.
Kim
,
Y. W.
Choi
, and
H. L.
Tuller
,
Appl. Phys. Lett.
87
,
043509
(
2005
).
2.
C. D.
Dimitrakopoulos
,
S.
Purushothaman
,
J.
Kymissis
,
A.
Callegari
, and
J. M.
Shaw
,
Science
283
,
822
(
1999
).
3.
L. A.
Majewski
,
R.
Schreoder
, and
M.
Grell
,
Adv. Mater. (Weinheim, Ger.)
17
,
192
(
2005
).
4.
C.
Bartic
,
H.
Jansen
,
A.
Campitelli
, and
S.
Borghs
,
Org. Electron.
3
,
65
(
2002
).
5.
L. A.
Majewski
,
M.
Grell
,
S. D.
Ogier
, and
J.
Veres
,
Org. Electron.
4
,
27
(
2003
).
6.
K. T.
Kang
,
M. H.
Lim
,
H. G.
Kim
,
Y. W.
Choi
,
H. L.
Tuller
,
I. D.
Kim
, and
J. M.
Hong
,
Appl. Phys. Lett.
87
,
242908
(
2005
).
7.
J.
Lu
and
S.
Stemmer
,
Appl. Phys. Lett.
83
,
2411
(
2003
).
8.
I. D.
Kim
,
H. S.
Kim
,
J. S.
Park
, and
H. L.
Tuller
,
Appl. Phys. Lett.
85
,
4705
(
2004
).
9.
Y. P.
Hong
,
S.
Ha
,
H. Y.
Lee
,
Y. C.
Lee
,
K. H.
Ko
,
D. W.
Kim
,
H. B.
Hong
, and
K. S.
Hong
,
Thin Solid Films
419
,
813
(
2002
).
10.
H.
Wang
,
R.
Elsebrock
,
T.
Schneller
,
R.
Waser
, and
X.
Yao
,
Solid State Commun.
132
,
481
(
2004
).
11.
J.
Lu
,
Z.
Chen
,
T. R.
Yaylor
, and
S.
Stemmer
,
J. Vac. Sci. Technol. A
21
,
1745
(
2003
).
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