Poly-Ge thin-film transistors (TFTs) with Schottky source/drain (S/D) contacts were fabricated on glass by low-temperature processing. First, the annealing characteristics of Ni/crystal-Ge stacked structures were examined. The results indicated that Schottky contacts (, ) with flat interfaces and low reverse leakage current could be obtained by choosing an appropriate annealing temperature . Based on this result, -channel TFTs were fabricated with poly-Ge formed on glass by solid-phase crystallization at . TFTs showed relatively high hole mobility (about ) with very low S/D parasitic resistance and no kink effect. The potential capability of the proposed devices for high-performance TFTs was demonstrated.
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