Electrical activation and redistribution of boron implants in preamorphized silicon after nonmelt laser annealing at and isochronal rapid thermal postannealing are reported. Under the thermal conditions used for a nonmelt laser at , a substantial residue of end-of-range defects remained after one laser scan but these were mainly dissolved within ten scans. The authors find dramatic boron deactivation and transient enhanced diffusion after postannealing the one-scan samples, but very little in the five- and ten-scan samples. The results show that end-of-range defect removal during nonmelt laser annealing is an achievable method for the stabilization of highly activated boron profiles in preamorphized silicon.
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