The ability to create stable, highly conductive ultrashallow doped regions is a key requirement for future silicon-based devices. It is shown that biaxial tensile strain reduces the sheet resistance of highly doped -type layers created by Sb or As implantation. The improvement is stronger with Sb, leading to a reversal in the relative doping efficiency of these -type impurities. For Sb, the primary effect is a strong enhancement of activation as a function of tensile strain. At low processing temperatures, 0.7% strain more than doubles Sb activation, while enabling the formation of stable, -deep junctions. This makes Sb an interesting alternative to As for ultrashallow junctions in strain-engineered complementary metal-oxide-semiconductor devices.
Highly conductive Sb-doped layers in strained Si
N. S. Bennett, N. E. B. Cowern, A. J. Smith, R. M. Gwilliam, B. J. Sealy, L. O’Reilly, P. J. McNally, G. Cooke, H. Kheyrandish; Highly conductive Sb-doped layers in strained Si. Appl. Phys. Lett. 30 October 2006; 89 (18): 182122. https://doi.org/10.1063/1.2382741
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